Fuji Electric has developed a small package for SiC power components

Fuji Electric has developed a new package for SiC power semiconductor components (below: power components). According to Fuji Electric introduced, the volume is about the original Si power components package 1/4. In addition, miniaturization and reliability are achieved through the use of wire bonding technology that does not require wire bonding, an insulating backplane with low thermal resistance, and an encapsulating resin with high heat resistance. Fuji Electric also used the package to develop a power module with multiple SiC Schottky barrier diodes (SBDs) placed in parallel. Withstand voltage of 1200V, the output current of about 400A. Dispersing the SBD improves heat dissipation. Fuji Electric plans to use this development package to promote the development of modules equipped with SiC SBDs and MOSFETs and to promote the application in various fields such as solar power generation systems and hybrid vehicles. In addition, Fuji Electric plans to supply samples for the year 2010, SiC SBD, 2011 sample supply MOSFET.